一种用于释放GaN HEMT快速开关潜力的动态两级栅极驱动器

The gate terminal of mainstream Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is particularly vulnerable to the gate voltage ringing during the fast-switching transient due to its narrow gate voltage headroom for safe operation. In this work, a new gate driver circuit with expanded gate voltage headroom and suppressed gate-loop oscillation/ringing is proposed. The new design is...