用于增强电流平衡和降低寄生电感的SiC功率模块对称与交错端子布局

This article introduces a fully symmetric layout for a 4-parallel silicon carbide (SiC) mosfet half-bridge power module, wherein each power loop within the module exhibits physical and electrical symmetry along the $x$-axis, $y$-axis, and center. This symmetric layout ensures inductance consistency across the power loops, facilitating balanced current sharing within the power module. The imbalance...