通过优化屏蔽设计降低SiC半桥模块的近场磁辐射与寄生电感

Near-field radiation and parasitic inductance are key challenges for silicon carbide (SiC) mosfets. Current packaging techniques aiming at reducing inductance primarily focus on minimizing the commutation loop area, but these methods require complex layouts, routings, and manufacturing processes. Based on the physical principle that inductance is determined by the integral of the magnetic energy d...