考虑失效模式的SiC MOSFET短路动态模型

A compact model could be an efficient tool and general solution to accurately predict the short-circuit (SC) dynamics of the SiC mosfet. In this article, an SC test setup is constructed to collect the model data, where no physical information of the SiC mosfet is required. The SC trajectory in the safety state and failure state is measured, and then the cumulative degradation of the gate oxide and...