一种基于准浮空沟道的SPICE模型，用于提高多结构SiC MOSFET的建模精度

This article introduces a novel quasi-floating channel model for accurately simulating the third quadrant behavior of silicon carbide (SiC) mosfets. The proposed model, developed to overcome the shortcomings in existing models, especially under the negative VGS bias, substantially improves the simulation accuracy of the I–V characteristics. The efficacy of the model is demonstrated through extensi...