基于栅极电荷注入概念的SiC MOSFET开关过电压与振荡同步抑制技术

Due to the inherent parasitic inductance and high switching speed, the SiC mosfet generally experience significant overvoltage and oscillation, reducing the voltage margin and causing substantial electromagnetic interference. To mitigate these challenges, a novel auxiliary circuit using the gate charge injection (GCI) concept is proposed in this article. The GCI circuit, assembled across the drain...