基于铝基覆铜板的GaN-HEMT功率模块：实现小功率回路电感与高散热性能

Gallium nitride high-electron-mobility transistors (GaN-HEMTs) are promising for high-speed switching capability and small on-resistance. However, large turn-off surge and limited cooling capability due to their small chip size are hindering their application to high power conversion. To solve these problems, this letter proposes a novel power module structure with small power loop inductance and ...