基于DBC的PCB封装GaN功率模块高密度集成与双面冷却设计

Lateral gallium nitride (GaN) high-electron-mobility transistors present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. This article discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and...