基于高压氮化铝陶瓷基板集成的氮化镓多芯片半桥功率模块

Power electronic systems employing wide-bandgap GaN transistors promise high efficiency operation and power density but require minimized parasitic circuit elements and an effective cooling concept. This article presents a half-bridge module integrating two 600 V/170 mΩ gallium nitride (GaN) high-electron mobility transistors with their gate drive stages and a fraction of the dc-link capacitance o...