一种基于双闭环自调节有源栅极驱动器的过冲与开关损耗最优折中控制策略

In the turn-off transient of silicon carbide (SiC) mosfet, the reduction of voltage overshoot is accompanied by an unavoidable increase in turn-off loss. Under different operating conditions, the requirement for overshoot and switching loss can be different. However, existing active gate drivers (AGDs) cannot achieve the optimal balance between overshoot and switching loss. To overcome this limita...