考虑非线性栅极电容的碳化硅MOSFET同步开关死区时间优化

The synchronous-switching dead-time optimization is critical for high-frequency silicon carbide (SiC)-based converters operating in the synchronous rectification mode. In previous research, the constant input capacitance Ciss from the datasheet was typically utilized for dead time optimization, which is obtained with a zero gate-source voltage (Vgs = 0). In practice, however, Ciss is strongly depe...