SiC MOSFET用于降低开关损耗的动态dv/dt控制策略

For silicon carbide power mosfets, high dv/dt in switching may bring about a high level of electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load currents. A dynamic dv/dt control strategy is then proposed for switching loss reduction in the whole operating range, by maintaining the dv/dt at the maximum acceptable level. The effectiveness of the proposed contro...