通过低压GaN HEMT级联配置改善Si SJ-MOSFET的反向恢复性能

The high reverse-recovery charge (Qrr) of the Si superjunction (SJ) mosfets’ body diode leads to exacerbated switching loss and even destructive dynamic avalanche. In this article, we propose a GaN/Si-SJ cascode structure that combines the high-voltage Si SJ-mosfets with a low-voltage GaN HEMT. Benefiting from introducing GaN HEMT, the GaN/Si-SJ cascode structure features zero Qrr at moderate curr...