一种无需电流测量的SiC MOSFET导通电阻在线估计方法

While silicon carbide power mosfets have significantly superior figures-of-merit in comparison to conventional silicon devices, they have seen relatively limited adoption in high-power applications due to intrinsic reliability concerns. One of the most consistent precursors of early device failure is increased on-state resistance (R$_\mathrm{ds-\text{on}}$). This article presents the design of a n...