兆赫兹高频开关下p-Gate GaN HEMT的过压鲁棒性研究

This article investigates the ruggedness of the GaN high electron mobility transistor (HEMT), a power device without avalanche capability, in continuous, high-frequency, overvoltage switching. A testbed based on a zero-voltage-switched converter with an active clamping circuit is developed to enable the stable switching with kilovolt overvoltage and megahertz frequency. The overvoltage failure bou...