一种扩展BSIM3模型以适用于碳化硅功率MOSFET的紧凑模型

This article presents an approach adopting and extending the industry-standard BSIM3 model with necessary extensions to build an accurate compact model for 1.2-kV silicon carbide (SiC) power mosfets. The BSIM3 model is adopted to describe the controlled channel part of the power mosfets. Compared with the models provided by the device vendors, the standard model shows higher fidelity in the simula...