基于跨象限运行的GaN HEMT E类功率放大器功率转换能力增强

Class-E power amplifiers are widely used in megahertz frequency power conversion systems due to their high efficiency, which can further be enhanced by virtue of wide-bandgap devices such as GaN high-electron-mobility transistors. Here, a GaN-based cross-quadrant mode Class-E amplifier is proposed, which addresses one of the major challenges for such amplifiers, i.e., to achieve both high power an...