鳍片倾斜角度优化以提升横向β-Ga2O3 MOSFET的电学性能

In this work, the influence of fin-slanted angles ( _α_) on the electrical performance of lateral _β_-Ga2O3 MOSFETs was investigated through a combination of experiments and Sentaurus TCAD simulations. The fin-slanted devices demonstrated enhancement-mode characteristics with an on/off ratio of around 107. The increment in _α_ resulted in improved drain-to-source current ( _I_ DS) and extrinsic transconductance ( _G_ m). The voltage-blocking performance also showed significant enhancement with increasing _α_ due to the mitigation of edge crowding, achieving a 40% increase in the breakdown voltage ( _V_ BR) for devices with an _α_ of 15° and gate-to-drain length ( _L_ GD) of 10 _μ_ m. A detailed simulation analysis of the electric field distribution within the fin at the gate electrode edge identified an optimal _α_ of approximately 25°, which effectively mitigates electric field crowding and has the potential to enhance the DC performance of the MOSFETs. These findings highlight the cr