具有纳秒级开关特性和鲁棒过压能力的1.2 kV/25 A增强型P-N结/AlGaN/GaN HEMT

With a reverse p-n junction in the gate stack design, this work demonstrates a 1.2 kV/25 A normally off p-n junction/AlGaN/GaN high-electron mobility transistor (PNJ-HEMT). Benefiting from the robust gate terminal, the PNJ-HEMT exhibits a large gate breakdown voltage of 18.2 V and a positive threshold voltage of 1.7 V, enabling a wide gate-bias window. Thereafter, with an applicable VGS of 10 V, t...