← 返回
ICP刻蚀中射频偏置功率对高铝组分AlGaN上n型欧姆接触电学特性的影响
Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
| 作者 | Van Hove |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 126 卷 第 8 期 |
| 技术分类 | 电动汽车驱动 |
| 技术标签 | GaN器件 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | 射频偏压功率 n型欧姆接触 低功率蚀刻 受主态缺陷 电学性能 |
语言:
中文摘要
研究了电感耦合等离子体刻蚀中射频（RF）偏置功率对n型欧姆接触电学特性的影响。通过降低RF偏置功率，在n-Al0.70Ga0.30N上实现了高质量的n型欧姆接触，比接触电阻率低至1.2×10−4 Ω·cm2。结果表明，低功率刻蚀在刻蚀表面引入的受主态缺陷较少，不仅减轻了对电子的补偿效应，还抑制了表面氧化程度，从而为改善金属-半导体接触的电学性能提供了有利条件。
English Abstract
The effects of the radio frequency (RF) bias power of inductively coupled plasma etching on the electrical properties of n-type Ohmic contact have been investigated. By reducing the RF bias power, a high-quality n-type Ohmic contact has been achieved on n-Al0.70Ga0.30N, with a specific contact resistivity of 1.2 × 10−4 Ω cm2. It is confirmed that low-power etching introduces fewer acceptor-state defects on the etched surface, which not only reduces the compensation for electrons but also reduces the degree of oxidation on the etched surface, providing favorable conditions for improving the electrical properties of metal–semiconductor contacts.
S
SunView 深度解读
该高铝组分AlGaN欧姆接触优化技术对阳光电源功率器件应用具有重要价值。研究通过降低ICP刻蚀RF偏置功率，将比接触电阻率降至1.2×10⁻⁴ Ω·cm²，可直接应用于ST储能变流器和SG光伏逆变器中的GaN功率器件制造。低接触电阻能显著降低器件导通损耗，提升三电平拓扑和高频开关电路效率。该工艺抑制表面氧化和缺陷态的技术路径，为阳光电源车载OBC和充电桩中的高压GaN器件提供可靠性保障，尤其适用于1500V高压系统对器件低损耗和高可靠性的严苛要求，支撑功率密度和系统效率的持续提升。