温度依赖的静电、线性度及模拟/射频性能研究

Temperature has a major impact on the performance and reliability of high-frequency AlGaN/GaN HEMTs for high-power applications. Despite substantial research, these devices’ multi-bias behavior throughout a wide temperature range is still poorly understood. This study investigates DC, electrostatic, nonlinear, and analog/RF parameters from − 40 to 150 ℃ to fill this gap. The performance of GaN HEMT was evaluated by examining ON/OFF-state currents, subthreshold features, transconductance (g m ), and its derivative, along with related parameters such as IMD 3 , 1-dB CP, and THD, which were evaluated together with RF performance indicators, including gain (A v ) and gate-to-drain capacitance (C gd ). The transconductance generating factor (TGF), together with the product such as gain frequency (GFP), gain bandwidth (GBW), transconductance frequency (TFP), and gain transconductance frequency (GTFP), was also investigated. Among the electrostatic performance parameters, the currents in the ON state decreased, and the OFF state displayed an increasing trend as the temperature increased. The S-slope and S-swing, on the other hand, show a reverse trend with temperature. Both the current and the g m , along with its derivatives (g m2 and g m3 ), exhibit a declining trend as the temperature increases. The nonlinear performance of VIP 2 , VIP 3 , IIP 3 , 1-dB CP, IMD 3 , and THD, which rely on g m ,is decreased with temperature. In terms of RF parameters, the A v , C gd , f t , and f max , as well as the TGF and GFP, are found to decrease with temperature. Meanwhile, the GBW, TFP, and GTFP all demonstrate an increasing trend with temperature. These findings provide valuable insights into the thermal impact on device parameters, which can be utilized to promote state-of-the-art technologies for the present and forthcoming deployments.