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电动汽车驱动 SiC器件 GaN器件 ★ 5.0

研究一种离子掺杂剂在有机半导体及热电应用中的掺杂性能

Investigating the doping performance of an ionic dopant for organic semiconductors and thermoelectric applications

语言:

中文摘要

掺杂在提升有机半导体在光电子和热电器件中的性能方面起着关键作用。本研究系统探讨了离子掺杂剂4-异丙基-4′-甲基二苯基碘𬭩四(五氟苯基硼酸盐)(DPI-TPFB)作为p型掺杂剂在有机半导体中的性能与适用性。以p型PBBT-2T为模型,通过ESR、紫外-可见-近红外吸收光谱及功函数分析证实其显著掺杂效果,使薄膜电导率提升超过四个数量级。DPI-TPFB还表现出广泛的适用性,可有效掺杂多种p型材料,并使n型N2200转变为p型行为。将其应用于有机热电器件,获得约10 μW∙m⁻¹∙K⁻²的功率因子,展现出其在有机光电子与热电集成器件中的巨大潜力。

English Abstract

Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelec-tronic and thermoelectric applications.In this study,we systematically investigated the doping performance and applicability of the ionic dopant 4-isopropyl-4′-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate)(DPI-TPFB)as a p-dopant for OSCs.Using the p-type OSC PBBT-2T as a model system,we demonstrated that DPI-TPFB shows significant doping effect,as con-firmed by ESR spectra,ultraviolet-visible-near-infrared(UV-vis-NIR)absorption,and work function analysis,and enhances the electronic conductivity of PBBT-2T films by over four orders of magnitude.Furthermore,DPI-TPFB exhibited broad doping appli-cability,effectively doping various p-type OSCs and even imparting p-type characteristics to the n-type OSC N2200,transform-ing its intrinsic n-type behavior into p-type.The application of DPI-TPFB-doped PBBT-2T films in organic thermoelectric devices(OTEs)was also explored,achieving a power factor of approximately 10 μW∙m-1∙K-2.These findings highlight the potential of DPI-TPFB as a versatile and efficient dopant for integration into organic optoelectronic and thermoelectric devices.
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SunView 深度解读

该离子掺杂有机半导体技术对阳光电源热管理系统具有潜在价值。研究中10 μW∙m⁻¹∙K⁻²的热电功率因子可应用于ST储能变流器和SG光伏逆变器的余热回收利用,将功率器件散热转化为电能,提升系统综合效率。有机热电材料的柔性特性适合贴合SiC/GaN功率模块表面进行温差发电,为辅助电路供电。在电动汽车驱动系统中,可集成于电机控制器散热器,实现热能梯级利用。该技术为阳光电源开发新型热电混合能量管理方案提供创新思路,特别是在大型PowerTitan储能系统中,通过有机热电器件回收变流器损耗热量,可进一步优化系统能效指标。