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关于金刚石异质结器件的展望
A perspective on diamond heterojunction devices
| 作者 | Ruoying Zhang · United Kingdom · Nianhua Peng · Haitao Ye |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 127 卷 第 7 期 |
| 技术分类 | 电动汽车驱动 |
| 技术标签 | 储能系统 宽禁带半导体 SiC器件 GaN器件 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | 金刚石异质结器件 电子设备 热导率 传统半导体 潜在应用 |
语言:
中文摘要
在5G、电动汽车和量子技术快速发展的背景下,对更高速、高效且耐用电子器件的需求激增,促使研究人员探索突破传统半导体材料(如硅、GaN和SiC)极限的新体系。金刚石因其卓越的热导率、极高的硬度和宽禁带特性,成为极具潜力的候选材料。结合先进的异质结结构,金刚石基异质结器件在超高速功率电子、下一代量子计算及高频射频系统等领域展现出革命性应用前景。本文综述了该领域的重要进展与挑战。
English Abstract
As the demand for faster, more efficient, and durable electronic devices surges in the age of 5G, electric vehicles, and quantum technologies, researchers are turning to unconventional materials to push the boundaries of what is possible. Among these materials, diamond, long admired for its unmatched thermal conductivity, extreme hardness, and wide bandgap, has emerged as a game-changing contender. When combined with advanced heterojunction architectures, diamond-based heterojunction devices offer a groundbreaking platform that surpasses the limitations of traditional semiconductors like silicon, GaN, and SiC. With potential applications spanning from ultra-fast power electronics to next-generation quantum computing and high-frequency radio frequency (RF) systems, diamond heterojunction devices hold the key to revolutionizing electronics in ways previously unimaginable. This review delves into the remarkable advancements in diamond-based heterojunction devices, highlighting their appli
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SunView 深度解读
金刚石异质结器件的超高热导率和宽禁带特性对阳光电源功率器件升级具有前瞻价值。在ST系列储能变流器和SG光伏逆变器中,当前采用的SiC/GaN器件已接近材料极限,金刚石器件可突破更高功率密度和开关频率瓶颈。其卓越散热性能可优化PowerTitan大型储能系统的热管理设计,减小冷却系统体积。在电动汽车OBC和电机驱动领域,金刚石器件的高温耐受性和低损耗特性可显著提升功率模块可靠性。虽然当前成本和工艺成熟度限制商业化应用,但该技术为阳光电源下一代超高效功率电子平台提供了重要研发方向,建议跟踪异质结界面优化和大尺寸衬底制备技术进展。