← 返回

面向碳化硅电流源逆变器的过电压保护方案

Over-voltage Protection Scheme for SiC-based Current Source Inverters

作者 Sneha Narasimhan · Subhashish Bhattacharya
期刊 IEEE Journal of Emerging and Selected Topics in Power Electronics
出版日期 2025年7月
技术分类 电动汽车驱动
技术标签 储能系统 宽禁带半导体 SiC器件 可靠性分析
相关度评分 ★★★★★ 5.0 / 5.0
关键词 电流源逆变器 过电压保护 宽禁带技术 可靠性 硬件原型
语言:

中文摘要

电流源逆变器(CSI)因其具备四象限运行、短路保护能力以及直流链路无需电解电容等固有优势,常用于大功率中压场合。宽禁带(WBG)器件的兴起推动了CSI在中压固态变压器、电动汽车、牵引系统及可再生能源系统中的重新应用。然而,直流链路电感电流突变引发的过电压问题严重影响系统可靠性,尤其在快速开关器件下需在数微秒内完成保护。本文分析现有过电压保护(OVP)方案的局限性,提出两种可在三相上实现更低钳位电压的OVP方案,并确保系统电压不超额定值。基于SiC MOSFET和二极管搭建了3.3 kV CSI实验样机,实验结果验证了所提OVP电路的有效性。

English Abstract

Current source inverters (CSI) are typically used for high-power medium voltage (MV) applications due to their inherent advantages of four-quadrant operation, short-circuit protection, and the absence of electrolytic capacitors at the DC-link. Wide bandgap (WBG) technology has led to the re-emergence of CSIs for MV solid-state transformers (SST), electric vehicles, traction applications, and renewable energy systems. The reliability of converter systems is critical for their widespread adoption. The over-voltage caused by interrupting the DC-link inductor current is a major concern for CSIs. With faster-switching devices, the device should be protected within a few microseconds. This paper compares and discusses the limitations of the existing over-voltage protection (OVP) schemes and proposes two over-voltage schemes that enable lower clamping voltage across all three phases. The OVP boards also help limit the system to its rated voltage. A 3.3 kV CSI hardware prototype was built using SiC MOSFETs and diodes. Experimental results are presented to validate the effectiveness of the proposed OVP board.
S

SunView 深度解读

该SiC电流源逆变器过电压保护技术对阳光电源多条产品线具有重要应用价值。在ST系列储能变流器中,CSI拓扑的四象限运行和短路保护能力可提升系统可靠性,所提OVP方案能有效抑制直流侧电感电流突变引发的过电压,保障SiC器件安全运行。在PowerTitan大型储能系统中,无电解电容的直流链路设计可延长系统寿命,降低维护成本。对于新能源汽车驱动和充电桩产品,该方案的微秒级快速保护响应与阳光电源SiC功率模块的高频开关特性高度匹配,可优化钳位电压设计,提升功率密度。建议将该三相OVP电路集成到下一代3.3kV及以上中压变流器平台,强化宽禁带器件应用的系统级保护能力。