Huang-Pair：一种新型高压二极管概念及其验证

The Huang-Pair is a novel hybrid diode concept based on the integration of a low forward voltage drop, low voltage rating diode with a high voltage majority carrier switch, such as a silicon carbide (SiC) Junction gate field-effect transistor (JFET). A 1200 V Huang-Pair is developed to demonstrate the concept in which a low voltage Si diode is paired with a 1200 V SiC JEFT, resulting in a low-forw...