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电动汽车驱动 SiC器件 ★ 5.0

碳化硅中自旋中心的多射频光子光谱相位控制

Phase control of multi-RF photon spectroscopy of spin centers in SiC

作者 Kingshuk Mallick · United Kingdom · Cristian Bonato · Alton Horsfall
期刊 Applied Physics Letters
出版日期 2025年1月
卷/期 第 127 卷 第 4 期
技术分类 电动汽车驱动
技术标签 SiC器件
相关度评分 ★★★★★ 5.0 / 5.0
关键词 碳化硅 硅空位中心 射频激发 光探测磁共振 偏振控制
语言:

中文摘要

通过射频(RF)激发实现对碳化硅中硅空位中心(⁠VSi⁻⁠)的自旋操控,为室温量子传感提供了可行途径。传统单RF天线方案对入射RF辐射的极化控制有限。本文展示了一种基于连续波光学系统的改进方法,实现了RF极化调控,并用于探测4H-SiC中VSi⁻缺陷的多射频光子磁共振。ODMR谱中多光子峰与零场分裂峰的RF功率依赖性差异表明其不同物理起源。在外加静态磁场下仍可检测到这些共振。通过引入额外RF源以调控极化,有助于揭示其机制。

English Abstract

The spin manipulation of silicon vacancy centers (⁠ VSi−⁠) in SiC via radio frequency (RF) excitation offers a promising approach to realizing room temperature quantum sensors. Conventional excitation schemes with a single RF antenna have limited control over the polarization of incident RF radiation. Here, we demonstrate how an optical setup operating in the continuous wave can be modified for polarization control, which can be leveraged for optical detection and control of multi-RF photon magnetic resonances occurring in VSi− defects in 4H–SiC. The difference in the RF power dependency of the multiphoton peaks in the Optically Detected Magnetic Resonance (ODMR) spectra with that of the Zero Field Split peak hints at the dissimilar origin of the peaks. These resonances are also detected in the presence of an external static magnetic field. To understand their origin, an additional RF source is introduced in the experimental setup that allows control of the polarization of the RF excit
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SunView 深度解读

该SiC自旋中心量子传感技术对阳光电源功率器件应用具有前瞻价值。研究揭示的VSi⁻缺陷多光子磁共振特性,可用于SiC MOSFET/二极管的非破坏性缺陷检测与可靠性评估。通过RF相位控制的ODMR光谱技术,能够精准表征SiC器件内部晶格缺陷分布,这对ST储能变流器、SG光伏逆变器中大量应用的SiC功率模块质量管控至关重要。该室温量子传感方法可集成到功率器件生产线,实现晶圆级缺陷筛查,提升器件耐压特性与长期可靠性。同时为电动汽车驱动系统中SiC模块的在线健康监测提供新思路,助力阳光电源功率半导体技术升级。