基于硅基氮化镓肖特基势垒二极管的超紧凑高频功率集成电路

Gallium nitride (GaN) transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available, and little is known about their performance and potential impact on power circuit design. In this article, we demonstrate scaled-up GaN-on-Si Tri-Anode Schottky barrier diodes (SBDs), whose excellen...