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高性能功率模块寄生参数表征的改进方法

Improved Methodology for Parasitic Characterization of High-Performance Power Modules

语言:

中文摘要

随着宽禁带半导体技术的商业化,对多芯片功率模块内部寄生阻抗的精确表征需求日益增长。现有测量方法在处理具有极低寄生参数的高性能模块时精度不足,难以满足测量底噪要求。本文提出了一种改进的表征方法,旨在提升高频功率模块寄生参数提取的准确性。

English Abstract

The accelerating commercialization of wide bandgap technology has led to increased demand for accurate characterization of parasitic impedances within packaging structures such as multichip power modules. However, the accuracy of known methods is not sufficient to characterize high-performance modules which have extremely low parasitics, with impedance values near the measurement floor of common i...
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SunView 深度解读

该研究对于阳光电源的核心产品线(如组串式逆变器、PowerTitan储能系统及风电变流器)至关重要。随着SiC和GaN等宽禁带器件在高性能功率模块中的广泛应用,寄生参数的精确表征直接决定了开关损耗、电压尖峰抑制及电磁兼容(EMC)设计的优劣。通过应用该改进方法,研发团队能更精准地优化模块封装结构,提升逆变器与PCS的功率密度与转换效率,并为iSolarCloud智能运维平台提供更可靠的器件健康状态评估基础。建议在下一代高功率密度模块设计中引入该表征流程,以降低开关应力,提升系统长期运行可靠性。