一种用于优化宽禁带半导体场效应管瞬态和色散行为预测的自动化模型调优程序

This article presents an automated procedure for developing wide bandgap semiconductor device models capable of capturing high-frequency effects in applications relevant to next generation power electronics. A derivative-free global optimization algorithm is used to autonomously model both the static and dynamic behavior of a power semiconductor device. This procedure is demonstrated with a specif...