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温度不均匀性和栅极陷阱电荷对碳化硅MOSFET电流不平衡的影响
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs
语言:
中文摘要
对于碳化硅（SiC）MOSFET，无论是多芯片模块还是多个分立器件，均需并联连接以实现高电流容量。然而，并联应用中出现的电流不平衡会降低器件的可靠性。本文重点研究了温度不均匀性和栅极陷阱电荷对SiC MOSFET电流不平衡行为的影响，并对阈值电压差异对电流不均匀性的影响进行了对比研究。最后，从电压和时间维度上比较了上述三个因素对SiC MOSFET电流不均匀特性的影响。结果表明，在静态过程中，由于温度不均匀性引起的漏源电流不平衡百分比可始终保持在10%以上；在动态过程中，由于温度不均匀性引起的漏源电流不平衡百分比同样可超过10%。
English Abstract
Abstract For SiC MOSFETs, either multi-chip modules or multiple discrete devices need to be connected in parallel to achieve high current capacities. However, the current imbalance that occurs in parallel applications can reduce device reliability. This paper focused on the effects of both temperature inhomogeneity and gate trap charge on the current imbalance behavior of SiC MOSFETs, and it also presented a comparison study of the effects of threshold voltage differences on the current inhomogeneity. Finally, the effects of the three factors above on the current inhomogeneity characteristics of SiC MOSFETs were compared in terms of their voltage and time dimensions. The results show that the percentage of the drain-source current imbalance due to temperature inhomogeneity for static processes can be maintained consistently at more than 10%. For dynamic processes, the percentage of the drain-source current imbalance due to temperature inhomogeneity can similarly exceed 10%.
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SunView 深度解读
该研究揭示SiC MOSFET并联应用中温度不均匀性和陷阱电荷导致的电流不平衡机理,对阳光电源ST系列储能变流器、电动汽车驱动系统及充电桩产品具有重要指导意义。研究表明静态和动态过程中温度不均匀性引起的电流失配均超过10%,这为我们优化多芯片并联SiC模块的热管理设计、改进栅极驱动均流策略提供理论依据。建议在大功率PCS和三电平拓扑中强化温度监测与动态补偿算法,提升器件可靠性和系统效率,巩固阳光在SiC应用领域的技术领先优势。