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多导电沟道MISHEMT器件对其模拟特性的影响
Influence of multiple MISHEMT conduction channels on its analog behavior
语言:
中文摘要
摘要 本文研究了MISHEMT器件（金属/氮化硅/AlGaN/AlN/GaN—金属-绝缘体-半导体高电子迁移率晶体管）的多个导电沟道对其基本直流（DC）和射频（RF）性能参数的影响。尽管大多数研究者将二维电子气（2DEG）沟道视为MISHEMT的主要导电通道，但本文表明，在某些器件中，其MOS沟道对不同射频参数的贡献至关重要。这一独特特性使得MISHEMT的射频参数同时依赖于栅源电压V<sub>GS</sub>和漏源电压V<sub>DS</sub>。2DEG沟道的最大可用增益（MAG）为15 dB，且几乎不随2DEG沟道长度变化。与单纯的2DEG导电相比，MOS沟道显著改善了一系列模拟性能参数。它可使最大可用增益（MAG）提升约23 dB，同时在更宽范围的V<sub>GS</sub>和漏极电流水平下维持较高的截止频率f<sub>T</sub>和最高振荡频率f<sub>max</sub>。
English Abstract
Abstract In this paper, the multiple channels of a MISHEMT device (Metal/Si 3 N 4 /AlGaN/AlN/GaN − Metal-Insulator-Semiconductor High Electron Mobility Transistor) are studied regarding their impact on fundamental DC and RF figures of merit. Although most authors treat the 2DEG channel as the MISHEMT main channel, it is shown that its MOS channel contribution to the different RF parameters is of great importance on some devices. This unique characteristic makes the MISHEMT RF parameters to be dependent on both V GS and V DS . The 2DEG channel presents a MAG value of 15 dB that is almost independent with the 2DEG channel length. In relation to a pure 2DEG conduction, the MOS channel is responsible for a large set of analog parameters improvements. It offers an increase of about 23 dB in maximum available gain (MAG), while sustaining a high f T and f max for a larger range of V GS and drain current level.
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SunView 深度解读
该MISHEMT双通道GaN器件研究对阳光电源功率器件应用具有重要价值。其MOS通道与2DEG通道协同工作可在宽VGS和VDS范围内保持高fT/fmax,MAG增益提升23dB,特别适用于SG系列逆变器和充电桩的高频开关应用。双通道特性可优化阳光三电平拓扑中GaN器件的动态性能,在宽负载范围保持高效率,为ST储能变流器和电驱OBC的GaN化升级提供器件级优化方向,助力实现更高功率密度和更宽高效区。