源漏串联电阻对AlGaN/GaN高电子迁移率晶体管电学参数影响的研究

Abstract This research investigates the impact of source-drain series resistance (R SD ) AlGaN/GaN high-electron-mobility transistors (HEMTs). Initially, the influence of R SD was analyzed in devices with varying geometries (Length and width; L g and W) as well as in devices with identical dimensions but fabricated using different gate metal manufacturing techniques. Subsequently, the effect of R SD on key parameters, including carrier mobility (μ n ), effective mobility ( μ eff ) and field effect mobility ( μ FE ), drain current ( I d ), output conductance ( g d ), transconductance ( g m ), threshold voltage ( V T ) and subthreshold slope ( S ) was assessed. The results reveal that R SD tends to decrease in transistors with lower L g and higher W, highlighting a significant correlation with the channel’s geometric structure. Additionally, transistors employing different gate metal splits exhibited variations in R SD . The results further revealed that a lower R SD enhances μ n , μ eff , μ FE , I d , g d , g m , and S , while reducing V T .