通过结构优化和跨导建模提升AlGaN/GaN高电子迁移率晶体管中的载流子输运性能

Abstract In GaN-based High-Electron Mobility Transistors (HEMTs), the carrier transport properties of the 2-Dimensional Electron Gas (2DEG), specifically the saturation velocity ( υ sat ) and effective mobility ( μ n_eff ,), are critical determinants of device performance. To enhance these properties, we conducted structural optimizations, which included reducing the Al mole fraction in the Al x Ga 1-x N barrier and introducing an AlGaN back barrier. Recognizing the limitations of traditional extraction techniques, we employed transconductance modeling to accurately extract effective mobility and saturation velocity values. The implementation of the AlGaN back barrier resulted in an effective mobility enhancement to 748 cm 2 /V·s. Additionally, reducing the Al mole fraction in the Al x Ga 1-x N top barrier led to an effective mobility improvement of 484 cm 2 /V·s. These findings provide valuable insights into the design of epitaxial structures for AlGaN/GaN HEMTs aimed at achieving superior performance in future applications.