实现碳化硅MOSFET的零开关损耗

Due to the unipolar conduction mechanism, the switching loss of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) is reduced significantly when compared with silicon insulated gate bipolar transistor (IGBT). This enables the use of SiC mosfet in high-frequency application. However, the switching loss could still thermally limit the upper limit of the switching freque...