半桥应用中级联GaN器件误导通的定量模型评估与抑制

Owing to the high operation frequency and fast switching speed, gallium nitride (GaN) devices are prone to the false turn-on phenomenon, causing high switching loss, shoot through, and even sustained oscillation. However, most of research on false turn-on aims at the enhancement-mode GaN devices, whereas there is still little published research on GaN devices in cascode configuration due to the co...