基于反向恢复下降存储电荷的高压大功率p-i-n二极管结温在线提取方法

This paper proposes a method to extract the junction temperature of high-voltage and high-power p-i-n diodes. It is investigated that the swept-out charge during reverse recovery current fall time is affected by junction temperature variation, which makes the swept-out charge a possible thermo-sensitive electrical parameter (TSEP). Thanks to the specific package of high-power IGBT modules with p-i...