一种利用门极-阴极电压提取IGCT导通期间结温的准确方法

In this paper, we propose a novel method to extract the accurate junction temperature of an integrated gate commutated thyristor (IGCT) during device conduction (on-state mode), by measuring the gate-cathode voltage of the device. We have shown that the gate-cathode voltage is a function of anode current and junction temperature Tvj. Indeed, the gate-cathode voltage of the device can be easily acc...