基于电流瞬态特征的p-GaN HEMT在重复ESD应力下的在线退化感知与机理分析

Reliability issues have persistently hindered the large-scale commercialization of E-mode GaN high electron mobility transistors with p-GaN gate. Therefore, it is important to sense the degradation of devices timely and understand the failure mechanisms. This article demonstrates the feasibility of an online degradation sensing method of Schottky-gate p-GaN HEMTs by tracking changes in current tra...