基于栅极雪崩阈值电压的高精度IGCT结温监测新方法

High-precision junction temperature monitoring is essential for the reliability of integrated gate commutated thyristors (IGCTs). However, the conventional temperature-sensitive electrical parameter (TSEP) method only reaches $\pm$ 5 K precision due to its low parameter sensitivity (typically below 2 mV/K). To address the limitation, this article proposes a novel TSEP method based on the gate aval...