半桥电路中GaN HEMT多模态无阻尼振荡的开关机制与影响分析

Gallium nitride high electron mobility transistors are widely used due to their advantages of fast switching speed and low on-resistance. However, these characteristics also render the circuits highly susceptible to instability. Undamped oscillations are one of the instability problems, which can result in excessive power loss or even more serious device breakdown. Current research primarily focus...