基于互感耦合的多芯片SiC功率模块动态均流方法

The dynamic current imbalance in multichip silicon carbide (SiC) power modules originates from parasitic inductance mismatches, creates localized chip overheating, and ultimately compromises the long-term reliability of the power module. The existing optimized method fails to consider the mutual couplings, thus proving inadequate for effectively guiding dynamic current sharing design. In this article, a novel dynamic current sharing method based on the proposed design guideline, which considers mutual inductances, is established to enhance the dynamic current sharing performance. Through response surface analysis, an optimal layout design is developed that reduces the dynamic current imbalance from 98% to merely 5%, achieving near-ideal current distribution. The effectiveness of the proposed approach is rigorously validated through the integrated simulation and experimental characterization.