基于45 μm多外延层超结柱的1200 V沟槽型场截止载流子存储半超结IGBT实验评估

Two Trench field-stop (FS) 1200 V/15 A carrier-storage semi-super-junction insulated gate bipolar transistors (CS-SemiSJBTs) are experimentally presented for the first time, whose SJ-pillar both are fabricated in the Multi-Epi process with thickness of 45 μm, and its pitch of cathode gate is 6 μm. Two commercial Trench/micro-pattern-trench (MPT) FS N-drift IGBT (NDBTs) are selected as benchmarks. Wafer thickness of fabricated CS-SemiSJBTs is 101 μm, along with $\textit{V} _{\text {on}}$ / $\textit{C} _{\text {res}}$ / $\textit{t} _{\mathrm{d},\text {on}}$ / $\textit{t} _{\mathrm{r}}$ / $\textit{t} _{{\mathrm{d}},\text {off}}$ / $\textit{t}_{\mathrm{f}}$ / $\textit{E} _{\text {on}}$ / $\textit{E} _{\text {off}}$ , all are reduced from referenced NDBTs under the effect of SemiSJ-pillar. According to measurement results, one of the CS-SemiSJBT has the ${t} _{\text {sc}}$ of 4.7 μs similar to H6, and its FOM is 1.4 times as H6; another CS-SemiSJBT has ${t} _{\text {sc}}$ of 15 μs similar to S7, and its FOM is 1.3 times as S7.