基于4H-SiC的低噪声前端电荷耦合晶体管，用于0.9%辐射能量分辨率

This brief presents a wide bandgap SiC-based approach for the low-noise charge coupling transistor in the front-end electronic applications, demonstrating precise detection and energy resolution for the -particles. With the joint construction techniques based on dual-gate epistructure design with alleviated capacitive coupling and charge leakage between the channel and the bottom gate, along with the etching damage repair and dry-wet-dry oxidation passivation fabrication process, 4H-SiC junction field-effect transistor (JFET) with room-temperature leakage of ~0.1 pA, input capacitance density as low as 0.285 fF/ m2, and output conductance down to 10^-6 S has been fabricated, achieving a preferable noise figure of 1.1 10^-19 A2/Hz at 1 kHz. Meanwhile, the quiescent operation point has been well modulated with maximum transconductance tuned near zero gate bias, while the on-to-off ratio reaches 10^10 . Correspondingly, the SiC JFET demonstrates excellent performance in the charge signal analysis with a standard error of 0.24%, and an energy resolution of 0.9% for the 5.4-MeV -particle. This work thus paves a way for SiC-based front-end electronics in radiation detection applications.