一种基于电荷分析的常关型p-GaN/AlGaN/GaN高电子迁移率晶体管漏极电流模型

This article presents a physics-based analytical model for the drain current of normally-off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs). The core model, the first of its kind, is derived from a unified function of 2-D electron gas (2DEG), encompassing all operational regions of the device. The proposed drain current model is rigorously validated against our experimental data and with results from the existing literature covering a broad spectrum of device parameters and a wide range of gate and drain biases. Notably, the presented drain current model eliminates the necessity for numerical solutions, and its physical approach results in a reduced set of parameters. Moreover, this drain current model is in compliance with the standard Gummel symmetry test.