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储能系统技术 GaN器件 ★ 5.0

锰掺杂对Mn_x_In2S3+x_

0 ≤ x ≤ 1.0)纳米粒子结构、形貌和光学性质的影响研究

作者 Springer Nature remains neutral with regard to jurisdictional claims in published maps · institutional affiliations.
期刊 Journal of Materials Science: Materials in Electronics
出版日期 2025年1月
卷/期 第 36.0 卷
技术分类 储能系统技术
技术标签 GaN器件
相关度评分 ★★★★★ 5.0 / 5.0
关键词 纳米颗粒 光学性质 热注入法 Mn²⁺离子 功能材料
语言:

中文摘要

控制纳米粒子的形貌和光学性质对于推动各种基于纳米材料的功能器件(如光电子器件、生物医学器件和储能器件)的发展至关重要。本研究通过热注入法合成了Mn_x_In2S3+x_(0 ≤ x ≤ 1.0)纳米粒子(NPs),并系统研究了其结构、形貌和光学特性。油酸和十八烯分别作为表面封端剂和非配位溶剂。Mn²⁺离子的引入从颜色变化上得以体现:材料由黄色(In₂S₃)逐渐转变为深棕色(MnIn₂S₄)。采用多种光谱技术,包括X射线衍射(XRD)、高分辨透射电子显微镜(HR-TEM)、X射线光电子能谱(XPS)、紫外-可见漫反射光谱(UV-DRS)以及光致发光光谱(PL)对纳米材料的结构、形貌和光学性质进行了表征。XRD分析证实形成了立方相的In₂S₃和MnIn₂S₄晶体结构。XPS分析验证了存在于MnIn₂S₄纳米粒子中各元素的电子氧化态。当x = 0时,In₂S₃纳米粒子呈球形;而当x = 1.0时,MnIn₂S₄纳米粒子则呈现片状形貌,该结果由HR-TEM图像所证实。紫外-可见漫反射光谱(UV–vis DRS)显示,随着x浓度从0增加至1.0,出现明显的蓝移现象。根据Kubelka-Munk作图法计算,Mn_x_In2S3+x_(0 ≤ x ≤ 1.0)纳米粒子的光学带隙(E_g)在2.18 eV至2.82 eV范围内。此外,光致发光(PL)发射表现出浓度依赖性,且在575 nm、490 nm和475 nm处出现强烈的宽发射带。最后,所合成的MnIn₂S₄纳米材料的发光特性对于探索其在光电子器件、生物成像及储能器件中的潜在应用具有重要意义。

English Abstract

Controlling the morphology and optical properties of nanoparticles is crucial for advancing the development of various nanomaterials based functional devices, such as optoelectronic, biomedical and energy storage devices. The current work investigates structural, morphological and optical properties of Mn x In 2 S 3+x (0 ≤ x ≤ 1.0) nanoparticles (NPs) synthesized by hot-injection method. Oleic acid and octadecene served as capping agents and non-coordinating solvents. The incorporation of Mn 2+ ions was evident from the color change from yellow (In 2 S 3 ) to dark brown (MnIn 2 S 4 ). The structural, morphological and optical properties of nanomaterials were characterized using various spectroscopic techniques, like XRD, HR-TEM, XPS, UV-DRS and PL analysis. XRD analysis confirms the formation of cubic In 2 S 3 and MnIn 2 S 4 crystal structures. XPS analysis verified the electronic oxidation states of elements, which are present in MnIn 2 S 4 NPs. In 2 S 3 ( x = 0), and MnIn 2 S 4 ( x = 1.0) nanoparticles exhibits spherical, and flake-like morphologies, which are confirmed by HR-TEM images. UV–vis DRS revealed a blue-shifts with increasing ‘ x ’ concentration from 0 to 1.0. The optical band gap (E g ) range of Mn x In 2 S 3+x (0 ≤ x ≤ 1.0) was found in the range 2.18 and 2.82 eV by Kubelka- Munk plot. In addition, PL emissions shows concentration-dependent emissions with strong broad PL bands centered at 575, 490, and 475 nm. Finally, the luminescent properties of synthesized MnIn 2 S 4 nanomaterial holds significant importance for investigating the potential applications for optoelectronic, bioimaging and energy storage devices.
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SunView 深度解读

该MnIn2S4纳米材料研究对阳光电源储能系统具有潜在价值。其可调控的2.18-2.82eV带隙范围与光电特性,可为ST系列PCS的电化学储能材料优化提供思路。材料形貌可控合成技术可应用于PowerTitan电池系统的电极材料改进,提升能量密度和循环寿命。其发光特性也为iSolarCloud平台的光学传感监测技术提供新方案。纳米材料的热注入合成方法对功率器件散热材料研发具有借鉴意义,可优化SiC/GaN器件的热管理性能。