一种基于开通栅极电流变化率的SiC MOSFET栅极氧化层退化在线监测方法

Gate oxide degradation (GOD) presents a reliability issue for silicon carbide metal-oxide-semiconductor field-effect transistors, especially under high-temperature and high-electric-field conditions. This letter proposes an online condition monitoring method based on the peak value of the turn-on gate current change rate (dig/dt,max). The technique utilizes a noninvasive PCB Rogowski coil to measu...