基于场路耦合的SiC MOSFET电热耦合建模及其在浪涌结温计算中的应用

Chip temperature is crucial for assessing the surge reliability of silicon carbide metal-oxide-semiconductor-field-effect transistors (SiC mosfets). Unlike conventional reliance on virtual junction temperature in normal conditions, evaluating the non-uniform temperature distribution across the chip under surge conditions is essential for robustness and field reliability. This paper proposes a nove...