GaN HEMT中输出电容磁滞损耗的软开关测量：一种谐振Sawyer-Tower测量方法

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterization of Ediss is important for power device selection and for understanding their origins. Existing measurement methods either fail to apply realis...