肖特基型p-GaN栅HEMT的阈值电压

Schottky-type p-GaN gate gallium nitride high electron mobility transistors suffer from threshold voltage ($V_\mathsf {th}$) instability phenomenon. Both positive and negative $V_\mathsf {th}$ shifts are reported when device undertakes the voltage bias, but the impact of this $V_\mathsf {th}$ instability phenomenon on device switching behaviors is less investigated. In this study, the drain-source...