考虑多参数相关效应的GaN E-HEMT桥臂串扰解析模型与安全工作区分析

Wide band-gap field-effect power devices, such as gallium nitride (GaN) high electron mobility transistors are being widely used for a better system-level performance as a result of superior figure-of-merits in power-conversion application. But they could also suffer from more severe bridge-leg crosstalk issue in fast-switching operation due to their special device features. To suppress the bridge...